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SAM.govRef 80NSSC27946811Q
Dopant Selective Deep Reactive Ion Etching of 4H-SiC Wafer
N
Contracting officeNational Aeronautics and Space AdministrationSubmission deadlineOct 16, 202605:00 PM EDTClosed
PublishedOct 13, 2026
LocationCleveland, OH
- Notice type
- Special Notice
- NAICS industry
- 334413 · Semiconductor and Related Device Manufacturing
- Product or service code
- 5961 · SEMICONDUCTOR DEVICES AND ASSOCIATED HARDWARE
- Set-aside
- Not specified
- Place of performance
- OhioCleveland, OH
- Official notice
- View on SAM.gov ↗
Description
NASA/NSSC has a requirement for Dopant Selective Deep Reactive Ion Etching of 4H-SiC Wafer. See attached SOW for full details of the requirement. VENDORS MUST REFERENCE THE NOTICE ID WHEN SUBMITTING A CAPABILITY STATEMENT.
NOTE: Quotes received in response to this notice will NOT be considered and will not be evaluated by NASA’s Technical End User Team. We are currently only requesting Capability Statements.
The rest of this notice
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